ST13007N

ST13007NFP

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTORS

s

HIGH VOLTAGE CAPABILITY

s

NPN TRANSISTOR

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

APPLICATIONS

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

s

SWITCH MODE POWER SUPPLIES

DESCRIPTION

The device is manufactured using high voltage

Multi

Epitaxial

Planar

technology

for

high

switching speeds and high voltage capability.

They use a Cellular Emitter structure to enhance

switching speeds.

INTERNAL SCHEMATIC DIAGRAM

March 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

ST13007N

ST13007NF P

700

V

400

V

9

V

Collect or Current

8

A

Collect or Peak Current

16

A

Base Current

4

A

Base Peak Current

8

A

80

33

W

Storage T emperat ure

-65 to 150

Max. O perating Junction Temperature

150

1

2

3

TO-220

TO-220FP

1

2

3

®

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