13005B datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

1.67

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEV

Collector Cut -of f

Current (VBE =-1.5V)

VCE = 700V

Tca se = 100

IEBO

Emitter Cut -off

Current (IC =0)

VEB =9 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC = 10 mA

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =1 A

IB =0.2 A

IC =2 A

IB =0.5 A

IC =4 A

IB =1 A

0.5

0.6

VBE(s at)

∗ Base-Emitter

Saturation Voltage

IC =1 A

IB =0.2 A

IC =2 A

IB =0.5 A

1.2

1.6

hFE

DC Current Gain

IC =1 A

VCE =5 V

Group A

Group B

IC =2 A

VCE =5 V

RESI STIVE LO AD

St orage Time

Fall Time

IC =2 A

IB1 =-IB2 =0.4 A

VCC =125 V

Tp =30

µs

1. 5

0.2

3.0

µs

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %

Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups

according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.

ST13005 / STB13005-1

2/8

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