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IRF3704LPBF 数据表(PDF) 2 Page - International Rectifier

部件名 IRF3704LPBF
功能描述  HEXFET Power MOSFET
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF3704LPBF 数据表(HTML) 2 Page - International Rectifier

  IRF3704LPBF Datasheet HTML 1Page - International Rectifier IRF3704LPBF Datasheet HTML 2Page - International Rectifier IRF3704LPBF Datasheet HTML 3Page - International Rectifier IRF3704LPBF Datasheet HTML 4Page - International Rectifier IRF3704LPBF Datasheet HTML 5Page - International Rectifier IRF3704LPBF Datasheet HTML 6Page - International Rectifier IRF3704LPBF Datasheet HTML 7Page - International Rectifier IRF3704LPBF Datasheet HTML 8Page - International Rectifier IRF3704LPBF Datasheet HTML 9Page - International Rectifier Next Button
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IRF3704/S/LPbF
2
www.irf.com
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
216
mJ
IAR
Avalanche Current

–––
71
A
Avalanche Characteristics
S
D
G
Diode Characteristics
77
…
308
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
42
–––
–––
S
VDS = 10V, ID = 57A
Qg
Total Gate Charge
–––
19
–––
ID = 28.4A
Qgs
Gate-to-Source Charge
–––
8.1
–––
nC
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
6.4
–––
VGS = 4.5V
ƒ
Qoss
Output Gate Charge
–––
16
24
VGS = 0V, VDS = 10V
td(on)
Turn-On Delay Time
–––
8.4
–––
VDD = 10V
tr
Rise Time
–––
98
–––
ID = 28.4A
td(off)
Turn-Off Delay Time
–––
12
–––
RG = 1.8Ω
tf
Fall Time
–––
5.0
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
––– 1996 –––
VGS = 0V
Coss
Output Capacitance
––– 1085 –––
VDS = 10V
Crss
Reverse Transfer Capacitance
–––
155
–––
pF
ƒ = 1.0MHz
VSD
Diode Forward Voltage
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
––– 0.88
1.3
V
TJ = 25°C, IS = 35.5A, VGS = 0V
ƒ
––– 0.82 –––
TJ = 125°C, IS = 35.5A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
38
57
ns
TJ = 25°C, IF = 35.5A, VR=20V
Qrr
Reverse Recovery Charge
–––
45
68
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
41
62
ns
TJ = 125°C, IF = 35.5A, VR=20V
Qrr
Reverse Recovery Charge
–––
50
75
nC
di/dt = 100A/µs
ƒ
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.021 –––
V/°C Reference to 25°C, ID = 1mA
–––
6.3
9.0
VGS = 10V, ID = 15A
ƒ
–––
9.8
13.5
VGS = 4.5V, ID = 12A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 16V, VGS = 0V
–––
–––
100
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -200
nA
VGS = -16V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m
Ω



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