STB12NM50FD_06 datasheet(4/18 Pages) STMICROELECTRONICS

部件名	STB12NM50FD

功能描述	N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD

4/18

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

500

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±30V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 6A

0.32

0.4

Ω

Table 5.

Dynamic

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID = 6A

9.8

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz,

VGS=0

1000

390

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=400V, ID = 3A

VGS =10V

(see Figure 11)

Gate input resistance

f=1 MHz Gate DC Bias= 0

test signal level = 20mV

open drain

Ω

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