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STP12NM50FD 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP12NM50FD
功能描述  N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP12NM50FD 数据表(HTML) 5 Page - STMicroelectronics

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STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Electrical characteristics
5/18
Table 6.
Switching times
Symbol
Parameter
Test Condictions
Min.
Typ.
Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=250 V, ID= 6A,
RG=4.7Ω, VGS=10V
(see Figure 17)
19
10
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=400 V, ID= 12A,
RG=4.7Ω, VGS=10V
(see Figure 17)
39
18
29
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
ISD
Source-drain current
12
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
48
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=12A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A, Tj=25°C
di/dt = 100A/µs,
VDD=30V, (see Figure 22)
140
800
11
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A, Tj=150°C
di/dt = 100A/µs,
VDD=30V, (see Figure 22)
252
1890
15
ns
nC
A



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