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STL75NH3LL 数据表(PDF) 4 Page - STMicroelectronics |
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STL75NH3LL 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() Electrical characteristics STL75NH3LL 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,@125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VDS = ± 16 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 10 A VGS= 4.5 V, ID= 10 A 0.004 0.005 0.0057 0.0075 Ω Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS=0 1810 565 41 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15 V, ID = 20 A, VGS = 4.5 V (see Figure 14) 18 4.8 5.3 24 nC nC nC RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain 0.5 1.5 3 Ω |
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