EM7640FS16AW55S datasheet(2/11 Pages) EMLSI

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EM610FV8 Series

Low Power, 128Kx8 SRAM

merging Memory & Logic Solutions Inc.

CS2

I/O

I/O6

DNU

I/O2

VSS

VCC

VSS

I/O

DNU

I/O

A10

A11

A12

A13

A14

FEATURES

• Process Technology : 0.18

µm Full CMOS

• Organization :128K x 8 bit

• Power Supply Voltage : 2.7V ~ 3.6V

• Low Data Retention Voltage : 1.5V(Min)

• Three state output and TTL Compatible

• Package Type : 36-FPBGA 6.0x7.0

GENERAL DESCRIPTION

The EM610FV8 families are fabricated by EMLSI’s

advanced full CMOS process technology. The families

support industrial temperature range and Chip Scale

Package for user flexibility of system design. The fami-

lies also supports low data retention voltage for battery

back-up operation with low data retention current.

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc

Range

Speed

Power Dissipation

PKG

Type

Standby

(ISB1, Typ)

Operating

(ICC1.Max)

EM610FV8

Industrial (-40 ~ 85

o C)

2.7V~3.6V

1) / 70ns

0.5

µA2)

3 mA

36FPBGA

Name

Function

Name

Function

CS1,CS2 Chip select inputs

Write Enable input

Output Enable input

Vcc

Power Supply

A0~A16

Address Inputs

Vss

Ground

I/O1~I/O 8 Data Inputs/outputs

DNU

Do Not Use

FUNCTIONAL BLOCK DIAGRAM

1. The parameter is measured with 30pF test load.

PIN DESCRIPTION

36-FPBGA : Top view (ball down)

I/O Circuit

Column Select

Data

Cont

Pre-charge Circuit

Memory Array

1024 x 1024

A10 A11 A12 A13 A14 A15

CS1

CS2

I/O1 ~ I/O8

VCC

VSS

Control Logic

A16

2. Typical values are measured at Vcc=3.3V, T A=25

oC and not 100% tested.

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