ST3M01 datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

ST3M01

4/11

ELECTRICAL CHARACTERISTICS (Unless otherwise specified, please refer to the typical operating

circut of the pag 1 for the external components values and connections. Unless otherwise noted

VSHDN=HIGH)

Note 1: For VIN < 1.9V the VO(LB) is out of regulation because of under dropout condition

Note 2: VO(DC/DC) = 3.5V force for an external DC source to avoid switching noise

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Operating Input Voltage

1.9

3.3

VO(DC/DC)

DC/DC Converter Output

Voltage (Test Circuit A)

2.24<VIN<3.3V;

0<IO(DC/DC)<200mA;

0<IO(LA)<20mA;

0<IO(LB)<20mA;

-40 < TJ < 85 °C

3.2

3.3

3.415

DC/DC Converter Efficency VIN=2.4V;

IO(DC/DC)=100mA;

IO(LA)=0mA; IO(LB)=0mA; TJ = 25°C

VO(LA)

Linear A Output Voltage

(Test Circuit A)

2.24<VIN<3.3V;

0<IO(DC/DC)<200mA;

0<IO(LA)<20mA;

0<IO(LB)<20mA;

-40 < TJ < 85°C

2.93

3.09

VO(LB)

Linear B Output Voltage

(Test Circuit A)

2.24<VIN<3.3V;

0<IO(DC/DC)<200mA;

0<IO(LA)<20mA;

0<IO(LB)<20mA;

-40 < TJ < 85°C

1.86

1.9

1.955

eN(LA)

Linear A Thermal Output

Noise Voltage (Note 2)

VIN=2.4V;

VO(DC/DC)=3.5V;

IO(LA)=20mA;

10 < f < 80KHz;

CO(LA)=1µF; CREF=0.1µF; TJ = 25°C

µV

rms

eN(LB)

Linear B Thermal Output

Noise Voltage (Note 2)

VIN=2.4V;

VO(DC/DC)=3.5V;

IO(LB)=20mA;

10 < f < 80KHz;

CO(LB)=1µF; CREF=0.1µF; TJ = 25°C

µV

rms

Iq(OFF)

Quiescent Current OFF

Mode DC/DC & LA OFF LB

ON) (Test Circuit E)

VIN=3.3V;

No Load;

VSHDN=LOW;

TJ = 25°C

µA

Iq(OFF)

Quiescent Current OFF

Mode (DC/DC & LA OFF LB

ON) (Test Circuit F)

VIN=1.9V;

No Load;

VSHDN=HIGH;

TJ = 25°C

µA

IS(DC/DC)

DC/DC Supply Current

(Test Circuit B)

VIN=2.24V;

No Load;

TJ = 25°C

100

µA

Iq(LA)

Linear A Quiescent Current

(Test Circuit C)

VIN=2.24V;

VO(DC/DC)=3.5V;

IO(LA)=10mA; TJ = 25°C

220

µA

Iq(LB)

Linear B Quiescent Current

(Test Circuit C)

VIN=2.24V;

VO(DC/DC)=3.5V;

IO(LB)=10mA; TJ = 25°C

µA

VBATT

Low Battery Detection

Range

VSHDN=HIGH with falling edge

1.96

2.04

VBATT(HYS) Low Battery Detection

Hysteresys

150

200

RON(LBO)

LBO RDSON

VIN=1.9V;

ID=5mA;

TJ = 25°C

Ω

Vih

Control Input Logic Low

VIN>2.24V;

-40 < TJ < 85°C

0.4

Vil

Control Input Logic High

VIN>2.24V;

-40 < TJ < 85°C

1.5

Ton

Timer On Response Time

on DC/DC

VIN=2.4V;

CO=100µF; TJ = 25°C

IO(DC/DC)=200mA

VSHDN=from GND to VSHDN(MAX)

0.6

RON(V_GND) Virtual GND RDSON

VIN>2.24V;

ID=5mA;

TJ = 25°C

Ω

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