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L6227Q 数据表(PDF) 19 Page - STMicroelectronics

部件名 L6227Q
功能描述  DMOS dual full bridge driver with PWM current controller
PDF  27 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6227Q 数据表(HTML) 19 Page - STMicroelectronics

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L6227Q
Application information
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5
Application information
A typical application using L6227Q is shown in Figure 18. Typical component values for the
application are shown in Table 8. A high quality ceramic capacitor in the range of 100 to
200 nF should be placed between the power pins (VSA and VSB) and ground near the
L6227Q to improve the high frequency filtering on the power supply and reduce high
frequency transients generated by the switching. The capacitors connected from the ENA
and ENB inputs to ground set the shut down time for the bridge A and bridge B respectively
when an over current is detected (see overcurrent protection). The two current sensing
inputs (SENSEA and SENSEB) should be connected to the sensing resistors with a trace
length as short as possible in the layout. The sense resistors should be non-inductive
resistors to minimize the dI/dt transients across the resistor. To increase noise immunity,
unused logic pins (except ENA and ENB) are best connected to 5 V (high logic level) or GND
(low logic level) (see pin description). It is recommended to keep power ground and signal
ground separated on PCB.
Table 8.
Component values for typical application
Component
Value
C1
100
µF
C2
100 nF
CA
1 nF
CB
1 nF
CBOOT
220 nF
CP
10 nF
CENA
5.6 nF
CENB
5.6 nF
CREFA
68 nF
CREFB
68 nF
D1
1N4148
D2
1N4148
RA
39 k
RB
39 k
RENA
100 k
RENB
100 k
RSENSEA
0.6
RSENSEB
0.6



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