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L6370 数据表(PDF) 7 Page - STMicroelectronics |
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L6370 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 19 page ![]() L6370 Electrical specifications 7/19 Note: Vil ≤ 0.8V, Vih ≥ 2V @ (V+In > V-In) Voth1 Output Status Threshold 1 Voltage (See Figure 3) 4.555.5 V Voth2 Output Status Threshold 2 Voltage 44.5 5.0 V Vohys Output Status Threshold Hysteresis 300 500 700 mV Iosd Output Status Source Current Vout > Voth1; Vos = 2.5V 2 4 mA Vosd Active Output Status Driver Drop Voltage Vs - Vos; Ios = 2mA Tamb = 0 to +85°C 1.5 3 V Ioslk Output Status Driver Leakage Current Vout < Voth2; Vos = 0V VS = 9.5 to 35V 25 µA Vdgl Diagnostic Drop Voltage D1 / D2 = L ; Idiag= 0.5mA D1 / D2 = L ; Idiag= 3mA 40 250 mV Idglk Diagnostic Leakage Current D1 / D2 = H ; 0 < Vdg < Vs VS = 9.5 to 35V 5 µA Source drain NDMOS diode Vfsd Forward On Voltage @ Ifsd = 2.5A 1 1.5 V Ifp Forward Peak Current t = 10ms; d = 20% 6 A trr Reverse Recovery Time If = 2.5A di/dt = 25A/µs 200 ns tfr Forward Recovery Time 100 ns Thermal characteristics ΘLim Junction Temp. Protect. 135 150 °C ΘTH Thermal Hysteresis 20 °C Table 5. Electrical characteristics (continued) (VS = 24V; TJ = –25 to +125°C, unless otherwise specified) Symbol Parameter Test condition Min. Typ. Max. Unit |
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