2N5089 datasheet(2/4 Pages) TAITRON

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NPN Small Signal General Purpose Transistors

2N5089

Rev. A/WW

www.taitroncomponents.com

Page 2 of 4

Electrical Characteristics (T Ambient=25ºC unless noted otherwise)

Symbol

Description

MIN

MAX

Unit

Conditions

V (BR)CEO

Collector-Base Breakdown Voltage

Open Emitter

V (BR) CBO

Collector-Emitter Breakdown Voltage

Open Base

ICBO

Collector Cut-Off Current

IE = 0; VCB =20V

IEBO

Emitter Cut-Off Current

100

IC = 0; VEB = 4.5 V

400

1200

IC = 100 µA; VCE = 5 V

450

IC = 1 mA; VCE = 5 V

hFE

DC Current Gain

400

IC = 10 mA; VCE = 5 V

VCE(sat)

Collector-Emitter Saturation Voltage

0.5

IC = 10 mA; IB =1mA

VBE(on)

Base-Emitter On Voltage

0.8

IC = 10 mA; VCE =5V

transition frequency

MHz

IC = 500 µA; VCE = 5 V;

f = 20 MHz

Collector-Base Capacitance

4.0

IE= 0; VCB =5V; f=100KHz

Emmiter-Base Capacitance

IC= 0; VCB =5V; f=100KHz

hfe

Small-Signal Current Gain

450

1800

IC = 1.0 mA, VCE = 5 V,

f = 1.0 kHz

Noise Figure

2.0

IC = 100 µA, VCE = 5.0 V,

RS=10 kΩ, f=10 Hz to 15.7 Hz

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