Feb.1999

MITSUBISHI SEMICONDUCTOR

〈THYRISTOR〉

CR02AM

LOW POWER USE

PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Test conditions

Junction to ambient

Unit

mA

mA

V

V

V

µA

mA

°C/W

Typ.

—

—

—

—

—

—

—

—

Symbol

Parameter

Repetitive peak reverse current

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Holding current

Thermal resistance

B

20 ~ 50

C

40 ~ 100

Item

µA)

A

1 ~ 30

The above values do not include the current flowing through the 1k

Ω resistance between the gate and cathode.

Limits

Min.

—

—

—

—

0.2

1

—

—

Max.

0.1

0.1

1.6

0.8

—

100

V2

3

180

3V

DC

6V

DC

60

Ω

2

1

TUT

1k

Ω

A3

A2

V1

A1

(Inner resistance of voltage meter is about 1k

Ω)

SWITCH

23

4

2

23

44

6

8

10

3

1

5

7

9

0

2.6

1.0

1.4

1.8

2.2

1.2

1.6

2.0

2.4

7

5

3

2

7

5

3

2

7

5

3

2

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

PERFORMANCE CURVES