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M95010-RBN3P/W 数据表(PDF) 22 Page - STMicroelectronics |
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M95010-RBN3P/W 数据表(HTML) 22 Page - STMicroelectronics |
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22 / 37 page ![]() M95040, M95020, M95010 22/37 Table 12. Capacitance Note: Sampled only, not 100% tested, at TA=25°C and a frequency of 5MHz. Table 13. DC Characteristics (M950x0, Device Grade 6) Note: 1. For all 5V range devices, the device meets the output requirements for both TTL and CMOS standards. 2. Previous product: identified by Process Identification letter K. 3. Present product: identified by Process Identification letter W or G. Symbol Parameter Test Condition Min. Max. Unit COUT Output Capacitance (Q) VOUT = 0V 8 pF CIN Input Capacitance (D) VIN = 0V 8 pF Input Capacitance (other pins) VIN = 0V 6 pF Symbol Parameter Test Condition Min. Max. Unit ILI Input Leakage Current VIN = VSS or VCC ± 2 µA ILO Output Leakage Current S = VCC, VOUT = VSS or VCC ± 2 µA ICC Supply Current C=0.1VCC/0.9VCC at 5MHz, VCC = 5 V, Q = open, Previous Product 2 5mA C = 0.1VCC/0.9VCC at 10MHz, VCC = 5 V, Q = open, Present Product 3 5mA ICC1 Supply Current (Standby Power mode) S = VCC , VCC = 5 V, VIN = VSS or VCC, Previous Product 2 10 µA S = VCC , VCC = 5 V, VIN = VSS or VCC, Present Product 3 2µA VIL Input Low Voltage –0.45 0.3 VCC V VIH Input High Voltage 0.7 VCC VCC+1 V VOL 1 Output Low Voltage IOL = 2 mA, VCC = 5 V 0.4 V VOH 1 Output High Voltage IOH = –2 mA, VCC = 5V 0.8VCC V |
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