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EM7640FS16AW10LL 数据表(PDF) 9 Page - Emerging Memory & Logic Solutions Inc |
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EM7640FS16AW10LL 数据表(HTML) 9 Page - Emerging Memory & Logic Solutions Inc |
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9 / 11 page ![]() EM620FU16 Series Low Power, 128Kx16 SRAM 9 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. DATA RETENTION CHARACTERISTICS NOTES 1. See the ISB1 measurement condition of datasheet page 4. Parameter Symbol Test Condition Min Typ Max Unit VCC for Data Retention VDR ISB1 Test Condition (Chip Disabled) 1) 1.5 - 3.3 V Data Retention Current IDR VCC=1.5V, ISB1 Test Condition (Chip Disabled) 1) - 0.5 - µA Chip Deselect to Data Retention Time tSDR See data retention wave form 0 - - ns Operation Recovery Time tRDR tRC - - tSDR tRDR Data Retention Mode CS 1 > Vcc-0.2V V cc 2.7V 2.2V V DR CS 1 GND tSDR tRDR Data Retention Mode V cc 2.7V CS2 VDR 0.4V GND CS2 < 0.2V DATA RETENTION WAVE FORM |
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