ST93C66

ST93C67

4K (256 x 16 or 512 x 8) SERIAL MICROWIRE EEPROM

NOT FOR NEW DESIGN

July 1997

1/13

This is information on a product still in production bu t not recommended for new de signs.

AI01252B

D

VCC

ST93C66

ST93C67

VSS

C

Q

S

ORG

Figure 1. Logic Diagram

1 MILLION ERASE/WRITE CYCLES, with

40 YEARS DATA RETENTION

DUAL ORGANIZATION: 256 x 16 or 512 x 8

BYTE/WORD and ENTIRE MEMORY

PROGRAMMING INSTRUCTIONS

SELF-TIMED PROGRAMMING CYCLE with

AUTO-ERASE

READY/BUSY SIGNAL DURING

PROGRAMMING

SINGLE SUPPLY VOLTAGE:

– 4.5V to 5.5V for ST93C66 version

– 3V to 5.5V for ST93C67 version

SEQUENTIAL READ OPERATION

5ms TYPICAL PROGRAMMING TIME

ST93C66 and ST93C67 are replaced by the

M93C66

DESCRIPTION

This specification covers a range of 4K bit serial

EEPROM products, the ST93C66 specified at 5V

± 10% and the ST93C67 specified at 3V to 5.5V. In

the text, products are referred to as ST93C66.

The ST93C66 is a 4K bit Electrically Erasable

Programmable Memory (EEPROM) fabricated with

SGS-THOMSON’s High EnduranceSingle Polysili-

con CMOS technology. The memory is accessed

through a serial input (D) and output (Q). The 4K

bit memory is divided into either 512 x 8 bit bytes

or 256 x 16 bit words. The organization may be

selected by a signal applied on the ORG input.

S

Chip Select Input

D

Serial Data Input

Q

Serial Data Output

C

Serial Clock

ORG

Organisation Select

Supply Voltage

Ground

Table 1. Signal Names

8

1

SO8 (CM)

150mil Width

8

1

PSDIP8 (B)

0.4mm Frame