ISC5804AT2 datasheet(1/3 Pages) ISAHAYA

部件名	ISC5804AT2

功能描述	Transistor

PDF	3 Pages

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制造商	ISAHAYA [Isahaya Electronics Corporation]

网页	http://www.idc-com.co.jp

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1 / 3 page

DESCRIPTION

2SC5804 is a super mini package resin sealed

silicon NPN epitaxial transistor,

It is designed for low frequency application.

Since it is a super-thin flat lead type package,a high-density

mounting are possible.

Complementary with 2SC3052.

FEATURE

●Super-thin flat lead type package. t=0.45mm

●Excellent linearly of DC forward current gain.

●Low collector to emitter saturation voltage

VCE(sat)=0.3V max (@Ic=100mA/IB=10mA)

APPLICATION

For hybrid IC,small type machine low frequency voltage

amplify application.

OUTLINE

DRAWING

Unit：ｍｍ

※The

dimension tolerance is reference value.

JEITA：

Terminal Connector

①：Base

②：Emitter

③：Collector

0.81±0.1

1.21±0.1

①

②

③

Equivalent circuit

Ｌ

Type name

hFE Item

A

B

C

D

E

F

G～J Month of Manufacture

Ｆ

A～F running No.

G

H

I

J

MAXIMUM RATING(Ta=25℃)

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to Base voltage

50

V

VEBO

Emitter to Base voltage

6

V

VCEO

Collector to Emitter voltage

50

V

IC

Collector current

150

mA

PC

Collector

dissipation(Ta=25℃)

150（*）

mW

Tj

Junction temperature

＋125

℃

Tstg

Storage temperature

-55～＋

125

℃

※package mounted on 9mm×19mm×1mm glass-epoxy substrate.

〈

Transistor〉

ISC5804AT2

Low frequency Application

Silicon NPN Epitaxial Type

0.2±0.05

ELECTRICAL CHARACTERISTICS (Ta=25℃)

LIMIT

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP

MIN

UNIT

TYP

Collector to Emitter Breakdown voltage

V(BR)CEO

I

C=100μA, R BE=∞

50

―

V

Collector cut off current

ICBO

V

CB=50V, I E=0mA

-

0.1

μA

Emitter cut off current

IEBO

V

EB=6V, I C=0mA

-

0.1

μA

DC forward current gain

hFE

V

CE=6V, I C=1mA

150

※

800

-

DC forward current gain

hFE

V

CE=6V, I C=0.1mA

90

-

C to E

saturation voltage

VCE(sat)

I

C=100mA, I B=10mA

-

0.3

v

Gain bandwidth product

fT

V

CE=6V, I E=-10mA

-

200

-

MHz

Collector output capacitance

Cob

V

CB=6V, I E=0mA,f=1MHz

-

2.5

-

pF

Noise figure

NF

V

CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ

-

15

dB

※ It shows hFE classification in below table.

Item

E

F

G

hFE

150～300

250～500

400～800

ISAHAYA ELECTRONICS CORPORATION

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