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INC2001AX 数据表(PDF) 2 Page - Isahaya Electronics Corporation

部件名 INC2001AX
功能描述  SILICON NPN EPITAXIAL TYPE
PDF  4 Pages
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制造商  ISAHAYA [Isahaya Electronics Corporation]
网页  http://www.idc-com.co.jp
标志 ISAHAYA - Isahaya Electronics Corporation

INC2001AX 数据表(HTML) 2 Page - Isahaya Electronics Corporation

  INC2001AX Datasheet HTML 1Page - Isahaya Electronics Corporation INC2001AX Datasheet HTML 2Page - Isahaya Electronics Corporation INC2001AX Datasheet HTML 3Page - Isahaya Electronics Corporation INC2001AX Datasheet HTML 4Page - Isahaya Electronics Corporation  
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FOR MUTING APPLICATION
.
INC2001AX SERIES
SILICON NPN EPITAXIAL TYPE
MAXIMUM RATING（Ｔａ＝２５℃）
RATING
SYMBOL
PARAMETER
INC2001AT2
INC2001AU1
INC2001AM1
INC2001AC1
UNIT
Ｖ
ＣＢＯ
Collector to Base voltage
40
V
Ｖ
ＥＢＯ
Emitter to Base voltage
40
V
Ｖ
ＣＥＯ
Collector to Emitter voltage
20
V
Ｉ
Ｃ
Collector current
600
mA
Ｐ
Ｃ
Collector
dissipation(Ta=25℃)
125（※）
150
200
mW
Ｔｊ
Junction temperature
+125
+150
℃
Ｔｓｔｇ
Storage temperature
-55～+125
-55～+150
℃
ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃）
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
LIMIT
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
Ｖ
（ＢＲ）ＣBＯ
C to B break down voltage
I
C=50μA，IE=0mA
40
V
Ｖ
（ＢＲ）EBＯ
E to B break down voltage
I
E=50μA，IC=0mA
40
V
Ｖ
（ＢＲ）CEＯ
C to E break down voltage
I
C=1mA，RBE=∞
20
V
Ｉ
ＣＢＯ
Collector cut off current
V
CB=40V，I E =0mA
0.5
μA
Ｉ
EＢＯ
Emitter cut off current
V
EB=40V，I C =0mA
0.5
μA
ｈ
ＦＥ
DC forward current gain
V
CE=5V，I C =10mA
820
2500
－
Ｖ
ＣＥ（ｓａｔ）
C to E saturation voltage
I
C =50mA，I B =2.5mA
40
150
mV
ｆ
Ｔ
Gain band width product
V
CE=10V，I E =-10mA，f=100MHz
50
MHz
C
ob
Collector output capacitance
V
CB=10V，I E =0A，f=1MHz
5.0
pF
R
ON
Output “ON” resistance
I
B=5mA，RL=1kΩ
0.65
Ω
TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT
0
20
40
60
80
100
012345
COLLECTOR TO EMITTER VOLTAGE VCE (V)
10uA
20uA
30uA
40uA
50uA
60uA
70uA
80uA
90uA
100uA
Ta=25℃
COMMON EMITTER TRANSFER
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
BASE TO EMITTER VOLTAGE VBE (V)
Ta=25℃
VCE=5V
ISAHAYA ELECTRONICS CORPORATION



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