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420 数据表(PDF) 2 Page - STMicroelectronics |
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420 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() START420 2/7 SOT343 4 12 3 Top view Note(1): Gms = | S21 / S12 | Symbol Parameter Test Conditions Min. Typ. Max. Unit Icbo Collector cutoff current Vcb = 5V, Ie = 0A 150 nA Iebo Emitter-base cutoff current Veb = 1.5V, Ic = 0A 15 µA Hfe DC current gain Ic = 20mA, Vce = 3V 100 150 NFmin Minimim noise figure Ic = 5mA, Vce = 2V, f = 1.8GHz, Zs = Zsopt 1.05 dB Ga NFmin associated gain Ic = 5mA, Vce = 2V, f = 1.8GHz 16 dB |S21|2 Insertion power gain Ic = 20mA, Vce = 2V, f = 1.8GHz 19.5 dB Gms (1) Maximum stable gain Ic = 20mA, Vce = 2V, f = 1.8GHz 22.6 dB P-1dB 1dB compression point Ic = 20mA,Vce = 2V, f = 1.8GHz 12.5 dBm OIP3 Ouput third order intercept point Ic = 20mA,Vce = 2V, f = 1.8GHz 23 dBm ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified) PINOUT PIN CONNECTION Pin No. Description 1BASE 3 COLLECTOR 2,4 EMITTER |
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