STB100NF04L datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STB100NF04L

功能描述	N-CHANNEL 40V - 0.0036 W - 100A D2PAK STripFET™ II POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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February 2002

.

STB100NF04L

N-CHANNEL 40V - 0.0036

Ω - 100A D2PAK

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.0036 Ω

s

LOW THRESHOLD DRIVE

s

100% AVALANCHE TESTED

s

LOGIC LEVEL DEVICE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SWITCHING SPEED

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

SOLENOID AND RELAY DRIVERS

TYPE

VDSS

RDS(on)

ID

STB100NF04L

40 V

<0.0042

Ω

100 A

ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL

1

3

D2PAK

TO-263

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(*) Current Limited by package

(1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, IAR = 50A, VDD= 30V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

40

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

40

V

VGS

Gate- source Voltage

± 16

V

ID(*)

Drain Current (continuos) at TC = 25°C

100

A

ID

Drain Current (continuos) at TC = 100°C

70

A

IDM(•)

Drain Current (pulsed)

400

A

Ptot

Total Dissipation at TC = 25°C

300

W

Derating Factor

2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

3.6

V/ns

EAS (2)

Single Pulse Avalanche Energy

1.4

J

Tstg

Storage Temperature

-65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STB100NF04L

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VBsemi Electronics Co.,...	STB100NF04L	1Mb / 9P	N-Channel 40 V (D-S) MOSFET

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