STB10NB20

N - CHANNEL 200V - 0.30

PowerMESH

™ MOSFET

s

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronis has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

November 1998

1

3

D

TO-263

(suffix ”T4”)

TYPE

ST B10NB20

200 V

< 0.40

Ω

10 A

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

200

V

Ω)200

V

G ate-source Volt age

± 30

V

A

A

•)

Drain Current (pulsed)

40

A

W

Derating Factor

0.68

W /

Peak Diode Recovery voltage slope

5.5

V/ns

Storage T emperature

-65 to 150

Max. O perat ing Junct ion T emperature

150

(

•) Pulse width limited by safe operating area

1/8