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STB150NF55 数据表(PDF) 1 Page - STMicroelectronics |
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STB150NF55 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 14 page  1/14 AUTOMOTIVE SPECIFIC October 2002 STB150NF55 STP150NF55 STW150NF55 N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247 STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.005 Ω s SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE TYPE VDSS RDS(on) ID STB150NF55 STP150NF55 STP150NF55 55 V 55 V 55 V <0.006 Ω <0.006 Ω <0.006 Ω 120 A(**) 120 A(**) 120 A(**) 1 2 3 1 3 D2PAK TO-263 (Suffix “T4”) TO-247 TO-220 INTERNAL SCHEMATIC DIAGRAM Ordering Information ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (**) Current Limited by Package (1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V SALES TYPE MARKING PACKAGE PACKAGING STB150NF55T4 B150NF55 D2PAK TAPE & REEL STP150NF55 P150NF55 TO-220 TUBE STW150NF55 W150NF55 TO-247 TUBE Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 55 V VGS Gate- source Voltage ± 20 V ID(**) Drain Current (continuous) at TC = 25°C 120 A ID Drain Current (continuous) at TC = 100°C 106 A IDM(•) Drain Current (pulsed) 480 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2.0 W/°C dv/dt (1) Peak Diode Recovery voltage slope 8 V/ns EAS (2) Single Pulse Avalanche Energy 850 mJ Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature |
类似零件编号 - STB150NF55 |
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类似说明 - STB150NF55 |
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