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EM640FU8E 数据表(PDF) 2 Page - Emerging Memory & Logic Solutions Inc

部件名 EM640FU8E
功能描述  512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
PDF  11 Pages
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制造商  EMLSI [Emerging Memory & Logic Solutions Inc]
网页  http://www.emlsi.com
标志 EMLSI - Emerging Memory & Logic Solutions Inc

EM640FU8E 数据表(HTML) 2 Page - Emerging Memory & Logic Solutions Inc

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EM640FU8E Series
Low Power, 512Kx8 SRAM
2
merging Memory & Logic Solutions Inc.
merging Memory & Logic Solutions Inc.
1
2
3
4
5
6
A
A0
A1
CS2
A3
A6
A8
B
I/O
5
A
2
WE
A
4
A
7
I/O
1
C
I/O6
DNU
A5
I/O2
D
VSS
VCC
E
VCC
VSS
F
I/O
7
A
18
A
17
I/O
3
G
I/O
8
OE
CS
1
A
16
A
15
I/O
4
H
A9
A10
A11
A12
A13
A14
FEATURES
• Process Technology : 0.18
µm Full CMOS
• Organization : 512K x 8 bit
• Power Supply Voltage : 2.7V ~ 3.3V
• Low Data Retention Voltage : 1.5V(Min)
• Three state output and TTL Compatible
• Package Type : 36-FPBGA 6.0x7.0
GENERAL DESCRIPTION
The EM640FU8E families are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The fami-
lies also supports low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Product
Family
Operating
Temperature
Vcc
Range
Speed
Power Dissipation
PKG
Type
Standby
(ISB1, Typ)
Operating
(ICC1.Max)
EM640FU8E
Industrial (-40 ~ 85
oC)
2.7V~3.3V
55
1) / 70ns
1
µA
2 mA
36FPBGA
Name
Function
Name
Function
CS1,CS2 Chip select inputs
WE
Write Enable input
OE
Output Enable input
Vcc
Power Supply
A0~A18
Address Inputs
Vss
Ground
I/O1~I/O 8 Data Inputs/outputs
DNU
Do Not Use
I/O Circuit
Column Select
Data
Cont
Data
Cont
Pre-charge Circuit
Memory Array
2048 x 2048
A1
A2
A3
A4
A5
A6
A7
A0
A8
A9
A11 A12 A13 A14 A15 A16
A18
WE
OE
CS1
CS2
I/O1 ~ I/O4
I/O5 ~ I/O8
VCC
VSS
Control Logic
FUNCTIONAL BLOCK DIAGRAM
1. The parameter is measured with 30pF test load.
A10
PIN DESCRIPTION
36-FPBGA : Top view (ball down)
A17



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