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STB160NF02L 数据表(PDF) 1 Page - STMicroelectronics |
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STB160NF02L 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() 1/7 PRELIMINARY DATA February 2001 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STB160NF02L N-CHANNEL 20V - 0.0018 Ω - 160A D2PAK STripFET™ POWER MOSFET (1) Limited by Package (2) ISD ≤100A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. s TYPICAL RDS(on) = 0.0018Ω s LOW THRESHOLD DRIVE s ULTRA LOW ON-RESISTANCE s VERY LOW GATE CHARGE s 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size ™” strip-based process. The resulting tran- sistor shows extremely high packing density with ultra low on-resistance, superior switching charac- teristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial. APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs s DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS (q) Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STB160NF02L 20 V < 0.0027 Ω 160 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 20 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 20 V VGS Gate- source Voltage ±15 V ID (1) Drain Current (continuos) at TC = 25°C 160 A ID Drain Current (continuos) at TC = 100°C 113 A IDM (q) Drain Current (pulsed) 640 A PTOT Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C EAS (2) Single Pulse Avalanche Energy 2.65 mJ Tstg Storage Temperature –65 to 175 °C Tj Max. Operating Junction Temperature 175 °C D2PAK 1 3 (TO-263) INTERNAL SCHEMATIC DIAGRAM |
类似零件编号 - STB160NF02L |
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类似说明 - STB160NF02L |
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