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STB160NF03L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB160NF03L
功能描述  N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET™ POWER MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB160NF03L 数据表(HTML) 3 Page - STMicroelectronics

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STB160NF03L
Safe Operating Area
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 15V, ID = 80A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
28
ns
tr
Rise Time
285
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 24V, ID = 160A,
VGS = 10V
123
21
40
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 15V, ID = 80A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
110
65
ns
ns
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =24V, ID =40A
RG =4.7Ω, VGS = 10V
110
35
70
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
160
A
ISDM (1)
Source-drain Current (pulsed)
640
A
VSD (2)
Forward On Voltage
ISD = 160A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80A, di/dt = 100A/µs,
VDD = 15V, Tj = 25°C
(see test circuit, Figure 5)
80
180
4.5
ns
nC
A
Thermal Impedance



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