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ST160NF3LL 数据表(PDF) 1 Page - STMicroelectronics |
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ST160NF3LL 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() 1/7 PRELIMINARY DATA May 2002 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STB160NF3LL N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.0026 Ω s LOW THRESHOLD DRIVE s ULTRA LOW ON-RESISTANCE s LOGIC LEVEL DEVICE s 100% AVALANCHE TESTED s SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS TYPE VDSS RDS(on) ID ST160NF3LL 30 V <0.003 Ω 160 A 1 3 D2PAK TO-263 (Suffix “T4”) ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (*) Current Limited by Package (1) Starting Tj = 25 oC, ID = 80A, VDD = 20V Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V VGS Gate- source Voltage ± 15 V ID(∗) Drain Current (continuous) at TC = 25°C 160 A ID Drain Current (continuous) at TC = 100°C 160 A IDM(•) Drain Current (pulsed) 640 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C EAS (1) Single Pulse Avalanche Energy 1.2 J Tstg Storage Temperature -55 to 175 °C Tj Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM |
类似零件编号 - ST160NF3LL |
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类似说明 - ST160NF3LL |
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