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EM641FV8FS 数据表(PDF) 7 Page - Emerging Memory & Logic Solutions Inc |
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EM641FV8FS 数据表(HTML) 7 Page - Emerging Memory & Logic Solutions Inc |
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7 / 10 page ![]() EM641FV8FS Series Low Power, 512Kx8 SRAM 7 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. tWR(4) tWC Address CS WE Data in Data out tCW (2) tAW tWP(1) t AS(3) High-Z tDW tDH High-Z t OW t WHZ Data Undefined TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED) Data Valid tWC Address CS WE Data in Data out tCW(2) t WR(4) t AW tWP(1) tDW tDH TIMING WAVEFORM OF WRITE CYCLE(2) (CS CONTROLLED) tAS(3) High-Z High-Z Data Valid NOTES (WRITE CYCLE) 1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins at the latest transition among CS goes low and WE goes low. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS or WE going high. |
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