STB19NB20

N - CHANNEL ENHANCEMENT MODE

PowerMESH

™ MOSFET

s

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family of

Power MOSFETs

with

outstanding

performance.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

June 1998

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

200

V

Ω)200

V

G ate-source Volt age

± 30

V

A

A

•)

Drain Current (pulsed)

76

A

W

Derating Factor

1

W /

Peak Diode Recovery voltage slope

5.5

V/ns

Storage T emperature

-65 to 150

Max. O perat ing Junct ion T emperature

150

(

•) Pulse width limited by safe operating area

1

3

D

TO-263

(suffix ”T4”)

TYPE

ST B19NB20

200 V

< 0.180

Ω

19 A

1/8