STB3020L datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STB3020L

功能描述	N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STB3020L

N - CHANNEL 30V - 0.019

Ω - 40A - D2PAK

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.019

Ω

s

LOW GATE CHARGE A 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalance characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-AC & DC-AC CONVERTERS IN HIGH

PERFORMANCE VRMs

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

®

INTERNAL SCHEMATIC DIAGRAM

March 1999

1

3

D

2PAK

TO-263

(suffix ”T4”)

TYPE

VDSS

RDS(on)

ID

ST B3020L

30 V

< 0.022

Ω

40 A

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)30

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC40

A

ID

Drain Current (continuous) at Tc = 100

oC28

A

IDM(

•)

Drain Current (pulsed)

160

A

Ptot

T otal Dissipation at Tc =25

oC80

W

Derating Factor

0.53

W /

oC

Tstg

Storage T emperature

-65 to 175

oC

Tj

Max. O perat ing Junct ion T emperature

175

oC

(

•) Pulse width limited by safe operating area

1/8

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类似说明 - STB3020L

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