SFS9926 datasheet(2/6 Pages) SEMIWELL

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SFS9926

Electrical Characteristics ( T

J = 25 °C unless otherwise noted )

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS/

Breakdown Voltage Temperature

coefficient

ID = 250uA, referenced to 25 °C

-24

mV/°C

IDSS

Drain-Source Leakage Current

VDS = 16V, VGS = 0V

IGSS

Gate-Source Leakage, Forward

VGS = 12V, VDS = 0V

100

Gate-Source Leakage, Reverse

VGS = -12V, VDS = 0V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250uA

0.5

1.5

RDS(ON)

Static Drain-Source On-state

Resistance

VGS = 4.5 V, ID = 6.5A

VGS = 2.5 V, ID = 5.4A

0.025

0.036

0.030

0.043

Ω

Dynamic Characteristics

Ciss

Input Capacitance

VGS =0 V, VDS =10V, f = 1MHz

-645

Coss

Output Capacitance

350

Crss

Reverse Transfer Capacitance

115

Dynamic Characteristics

td(on)

Turn-on Delay Time

VDD =10V, ID =1A, RG =50 Ω

VGS =4.5V

(Note 2,3)

-9

Rise Time

100

td(off)

Turn-off Delay Time

200

Fall Time

130

Total Gate Charge

VDS =10V, VGS =4.5V, ID =4.5A

(Note 2,3)

-14

Qgs

Gate-Source Charge

2.5

Qgd

Gate-Drain Charge(Miller Charge)

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit.

Maximum Continuous Diode Forward Current

1.3

VSD

Diode Forward Voltage

IS =1.3A, VGS =0V

(Note 2)

1.2

※ NOTES

1. Repeativity rating : pulse width limited by junction temperature

2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

3. Essentially independent of operating temperature.

4. Surface mounted on 1 inch2 Cu board.

2/6

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