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STB3NB60 数据表(PDF) 2 Page - STMicroelectronics

部件名 STB3NB60
功能描述  N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB3NB60 数据表(HTML) 2 Page - STMicroelectronics

  STB3NB60 Datasheet HTML 1Page - STMicroelectronics STB3NB60 Datasheet HTML 2Page - STMicroelectronics STB3NB60 Datasheet HTML 3Page - STMicroelectronics STB3NB60 Datasheet HTML 4Page - STMicroelectronics STB3NB60 Datasheet HTML 5Page - STMicroelectronics STB3NB60 Datasheet HTML 6Page - STMicroelectronics STB3NB60 Datasheet HTML 7Page - STMicroelectronics STB3NB60 Datasheet HTML 8Page - STMicroelectronics STB3NB60 Datasheet HTML 9Page - STMicroelectronics  
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THERMAL DATA
Rthj-ca se
Thermal Resistance Junction-case
Max
1.56
oC/W
Rthj- amb
Rthc-si nk
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by Tj max)
3.3
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
100
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID =250
µAVGS =0
600
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate Threshold
Voltage
VDS =VGS
ID =250
µA
3
45V
RDS( on)
St atic Drain-source On
Resistance
VGS =10V
ID = 1.6 A
3.3
3.6
Ω
ID(o n)
On St ate Drain Current
VDS >ID(on) xRDS(on) max
VGS =10 V
3. 3
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconduct ance
VDS >ID(on) xRDS(on)max
ID =1.6 A
1. 2
2
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0
400
57
7
520
77
9
pF
pF
pF
STB3NB60
2/9



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