STB3NC90Z datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STB3NC90Z

功能描述	N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH™III MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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May 2001

STB3NC90Z

N-CHANNEL 900V - 3.2

Ω - 3.5A D2PAK

Zener-Protected PowerMESH™III MOSFET

(1)ISD ≤3.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(*).Limited only by maximum temperature allowed

s

TYPICAL RDS(on) = 3.2Ω

s

EXTREMELY HIGH dv/dt AND CAPABILITY GATE

TO - SOURCE ZENER DIODES

s

100% AVALANCHE TESTED

s

VERY LOW GATE INPUT RESISTANCE

s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

s

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STB3NC90

900V

< 3.5

Ω

3.5 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

900

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

900

V

VGS

Gate- source Voltage

± 25

V

ID

Drain Current (continuos) at TC = 25°C

3.5

A

ID

Drain Current (continuos) at TC = 100°C

2.2

A

IDM (q)

Drain Current (pulsed)

14

A

PTOT

Total Dissipation at TC = 25°C

100

W

Derating Factor

0.8

W/°C

IGS

Gate-source Current (*)

±50

mA

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=15K

Ω)

2.5

KV

dv/dt

Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

D2PAK

1

3

类似零件编号 - STB3NC90Z

制造商	部件名	数据表	功能描述
STMicroelectronics	STB3NC90Z-1	335Kb / 11P	N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ II MOSFET Jan-2001

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类似说明 - STB3NC90Z

制造商	部件名	数据表	功能描述
STMicroelectronics	STP3NC90Z	335Kb / 11P	N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ II MOSFET Jan-2001
	STP4NC80Z	526Kb / 13P	N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™ II MOSFET Dec-2002
	STP5NC90Z	516Kb / 13P	N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET Dec-2002
	STP6NC90Z	532Kb / 13P	N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™ 줚II MOSFET July 2002
	STP7NC70Z	529Kb / 13P	N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™ II MOSFET May-2003
	STU8NC90Z	413Kb / 10P	N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET Sep-2000
	STW6NC90Z	243Kb / 8P	N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH™ III MOSFET Oct-2000
	STW7NC90Z	243Kb / 8P	N-CHANNEL 900V - 1.55ohm - 6A TO-247 Zener-Protected PowerMESH™ III MOSFET May-2001
	STW8NC90Z	251Kb / 8P	N-CHANNEL 900V - 1.1 ohm - 7.6A TO-247 Zener-Protected PowerMESH?줚II MOSFET Jul-2000
	STB9NK90Z	577Kb / 16P	N-CHANNEL 900V - 1.1Ohm - 8A - TO-220/FP-D2PAK-TO-247 Zener-Protected SuperMESH MOSFET 20-Jul-2006

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STB3NC90Z 数据表(PDF) 1 Page - STMicroelectronics

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STB3NC90Z 数据表(PDF) 1 Page - STMicroelectronics

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