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STB40NF10 数据表(PDF) 1 Page - STMicroelectronics |
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STB40NF10 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() STB40NF10 N - CHANNEL 100V - 0.030 Ω - 40A TO-263 LOW GATE CHARGE STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.030 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION s SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) DESCRIPTION This MOSFET series realized with STMicroelec- tronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequen- cy isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ® INTERNAL SCHEMATIC DIAGRAM May 2000 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS =20 k Ω) 100 V VGS G ate-source Volt age ± 20 V ID Drain Current (continuous) at Tc =25 oC40 A ID Drain Current (continuous) at Tc = 100 oC25 A IDM( •) Drain Current (pulsed) 160 A Ptot T otal Dissipation at Tc =25 oC 140 W Derating Factor 0.93 W / oC EAS (1) Single Pulse Avalanche Energy 135 mJ Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC ( •) Pulse width limited by safe operating area ( 1 ) starting Tj =25 oC, ID =40A , VDD = 50V TYPE VDSS RDS(on ) ID STB40NF10 100 V < 0.035 Ω 40 A D 2PAK TO-263 (Suffix ”T4”) 1 3 1/6 |
类似零件编号 - STB40NF10 |
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类似说明 - STB40NF10 |
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