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RT3AMMM 数据表(PDF) 2 Page - Isahaya Electronics Corporation |
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RT3AMMM 数据表(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 4 page ![]() PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Limits Symbol Parameter Test conditions Min Typ Max Unit V(BR)CEO Collector to Emitter break down voltage IC=100μA,RBE=∞ -50 - - V ICBO Collector cut off current VCB =-60V,IE=0 - - -0.1 μ A IEBO Emitter cut off current VEB=-6V,IC=0 - - -0.1 μ A hFE* DC forward current gain VCE=-6V,IC=-1mA 150 - 500 - hFE DC forward current gain VCE=-6V,IC=-0.1mA 90 - - - VCE(sat) Collector to Emitter saturation voltage IC=-100mA,IB=-10mA - - -0.3 V fT Gain band width product VCE=-6V,IE=10mA - 200 - MHZ Cob Collector output capacitance VCB=-6V,IE=0,f=1MHZ - 4.0 - pF NF Noise figure VCE=6V,IE=0.3mA,f=100HZ,RG=10kΩ - - 20 dB * : It shows hFE classification in right table. item E F hFE 150~300 250~500 ISAHAYA ELECTRONICS CORPORATION |
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