STB45N10L datasheet(1/6 Pages) STMICROELECTRONICS

部件名	STB45N10L

功能描述	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STB45N10L

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.028

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW INPUT CAPACITANCE

s

LOW GATE CHARGE

s

LOW LEAKAGE CURRENT

s

APPLICATION ORIENTED

CHARACTERIZATION

s

THROUGH-HOLE I2PAK (TO-262) POWER

PACKAGE IN TUBE (SUFFIX "-1")

s

SURFACE-MOUNTING D2PACK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX)

OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLY (SMPS)

s

CONSUMER AND INDUSTRIAL LIGHTING

s

DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY (UPS)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

100

V

VGS

Gate-source Voltage

± 15

V

ID

Drain Current (continuous) at Tc = 25

oC45

A

ID

Drain Current (continuous) at Tc = 100

o C32

A

IDM(

•)

Drain Current (pulsed)

180

A

Ptot

Total Dissipation at Tc = 25

o C

150

W

Derating Factor

1

W/

oC

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STB45N10L

100 V

< 0.036

Ω

45 A

March 1996

1

2

3

1

3

I2PAK

TO-262

D2PAK

TO-263

1/6

类似零件编号 - STB45N10L

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类似说明 - STB45N10L

制造商	部件名	数据表	功能描述
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STB45N10L 数据表(PDF) 1 Page - STMicroelectronics

STB45N10L 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STB45N10L

类似说明 - STB45N10L

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STB45N10L 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STB45N10L

类似说明 - STB45N10L

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