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STB4NB50 数据表(PDF) 2 Page - STMicroelectronics

部件名 STB4NB50
功能描述  N - CHANNEL 500V - 2.5ohm - 3.8A - D2PAK/I2PAK PowerMESHO MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB4NB50 数据表(HTML) 2 Page - STMicroelectronics

  STB4NB50 Datasheet HTML 1Page - STMicroelectronics STB4NB50 Datasheet HTML 2Page - STMicroelectronics STB4NB50 Datasheet HTML 3Page - STMicroelectronics STB4NB50 Datasheet HTML 4Page - STMicroelectronics STB4NB50 Datasheet HTML 5Page - STMicroelectronics STB4NB50 Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.56
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
3.8
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, I
D = IAR, VDD = 50 V)
220
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating
Tc = 125
oC
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
VDS = VGS
ID = 250
µA
34
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V
ID = 1.9 A
2.5
2.8
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
3.8
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 1.9 A
1.2
2.3
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
400
62
7.5
520
81
10
pF
pF
pF
STB4NB50
2/8



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