EM7323SU16HT-70LL datasheet(2/11 Pages) EMLSI

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EM7323SU16H

2Mx16 Async. / Page StRAM

Preliminary

Rev. 0.0

FEATURES

- Single power supply voltage of 2.6 to 3.3V

- Direct TTL compativility for all inputs and outputs.

- Deep power-down mode : Memory cell data invalid.

- Supplied in KGD(Known Good Die) form.

- Page operation mode

Page read operation by 8 words.

- Logic compatible with SRAM R/W pin.

- Standby Current

Standby 120 uA

Deep power-down standby (10) uA

- Access Time

Access Time

65ns

CE1 Access Time

65ns

OE Access Time

25ns

Page Access Time

20NS

2M x16 Bit Async./Page StRAM

GENERAL DISCRIPTION

The EM7323SU16H is a 32M-bit StRAM organized as 2M

words by 16 bits. It provides high density, high speed and

low power. The device operates single power supply. The

device also features SRAM-like W/R timing whereby the

device is controlled by CE1, OE and WE on asynchro-

nous. The device has the page access operation. Page

size is 8 words. The device also supports deep power-

down mode, realizing low-power standby.

PAD DESCRIPTION

SYMBOL

DESCRIPTION

A0~A20

Address input

A0~A2

Page Address input

CE1

Chip Enable Input1, Low : Enable

CE2

Chip Enable Input2, High:Enable, Low:Enter Power Down mode

Write Enable input, Low :Enable

Output Enable input, Low :Enable

Lower byte write control

Upper byte write control

DQ0~DQ15

Data inputs/outputs

VDD

Device Power supply

VSS

VSS must be connected ground

VDDQ

I/O Power supply

VSSQ

VSS must be connected ground

Not Connection

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