STB55NE06L datasheet(1/5 Pages) STMICROELECTRONICS

部件名	STB55NE06L

功能描述	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STB55NE06L

N - CHANNEL ENHANCEMENT MODE

" SINGLE FEATURE SIZE

™ " POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.018

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique "Single Feature Size

™ "

strip-based

process. The resulting transistor

shows extremely high packing density for low

on-resistance, rugged avalance characteristics

and less critical alignment steps therefore a

remarkable manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc. )

INTERNAL SCHEMATIC DIAGRAM

March 1998

1

3

D

2PAK

TO-263

(suffix "T4")

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

60

V

VGS

Gate-source Voltage

± 15

V

ID

Drain Current (continuous) at Tc = 25

o C55

A

ID

Drain Current (continuous) at Tc = 100

oC39

A

IDM(

•)

Drain Current (pulsed)

220

A

Ptot

Total Dissipation at Tc = 25

oC130

W

Derating Factor

0.86

W/

oC

dv/dt

Peak Diode Recovery voltage slope

7

V/ns

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STB55NE06L

60 V

< 0.022

Ω

55A

1/5

类似零件编号 - STB55NE06L

制造商	部件名	数据表	功能描述
STMicroelectronics	STB55NE06	98Kb / 8P	N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET Dec-1997

More results

类似说明 - STB55NE06L

制造商	部件名	数据表	功能描述
STMicroelectronics	STB60NE06-16	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Jan-1998
	STB80NE06-10	94Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Feb-1998
	STD20NE03L	105Kb / 9P	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET Dec-1997
	STD20NE06	96Kb / 8P	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET Jan-1998
	STP16NE06L	70Kb / 7P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET Oct-1997
	STP55NE06	120Kb / 9P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Jan-1998
	STP55NE06L	57Kb / 6P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Dec-1997
	STP60NE03L-10	99Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Dec-1997
	STP80NE03L-06	87Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Feb-2000
	STP80NE06-10	92Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Feb-1998

More results

STB55NE06L 数据表(PDF) 1 Page - STMicroelectronics

STB55NE06L 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STB55NE06L

类似说明 - STB55NE06L

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链接网址

STB55NE06L 数据表(PDF) 1 Page - STMicroelectronics

STB55NE06L 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STB55NE06L

类似说明 - STB55NE06L

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数据表 下载

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数据表下载