STB55NF06 datasheet(1/12 Pages) STMICROELECTRONICS

部件名	STB55NF06

功能描述	N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D²PAK STripFET™ II POWER MOSFET

PDF	12 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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March 2003

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STB55NF06 STB55NF06-1

STP55NF06 STP55NF06FP

N-CHANNEL 60V - 0.015

Ω - 50A TO-220/TO-220FP/I²PAK/D²PAK

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.015 Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

s

THROUGH-HOLE I²PAK (TO-262) POWER

PACKAGE IN TUBE (SUFFIX “-1")

DESCRIPTION

This Power MOSFET is the latest development of ST-

Microelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows ex-

tremely high packing density for low on-resistance,

rugged avalanche characteristics and less critical

alignment steps therefore a remarkable manufactur-

ing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SWITCHING SPEED

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE

TYPE

VDSS

RDS(on)

ID

STP55NF06

STB55NF06-1

STB55NF06

STP55NF06FP

60 V

<0.018

Ω

<0.018

Ω

<0.018

Ω

<0.018

Ω

50 A

50 A(*)

1

2

3

1

2

3

1

2

3

TO-220

TO-220FP

1

3

D²PAK

TO-263

(Suffix “T4”)

I²PAK

TO-262

(Suffix “-1”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area

(*)Refer to soa for the max allowable current value on FP-type due

to Rth value

Symbol

Parameter

Value

Unit

STP_B55NF06(-1)

STP55NF06FP

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

60

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

50

50(*)

A

ID

Drain Current (continuous) at TC = 100°C

35

35(*)

A

IDM(•)

Drain Current (pulsed)

200

200(*)

A

Ptot

Total Dissipation at TC = 25°C

110

30

W

Derating Factor

0.73

0.2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

7

V/ns

EAS (2)

Single Pulse Avalanche Energy

350

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

(1) ISD ≤50A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Tj = 25 oC, ID = 25A, VDD= 30V

(2) Starting

类似零件编号 - STB55NF06

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STB55NF06	317Kb / 2P	Isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STB55NF06	988Kb / 8P	N-Channel 60-V (D-S) MOSFET
STMicroelectronics	STB55NF06	797Kb / 19P	N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages 25-May-2012
	STB55NF06-1	543Kb / 18P	N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET 26-Jun-2006
	STB55NF06L	454Kb / 12P	N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET™ I POWER MOSFET Aug-2002

More results

类似说明 - STB55NF06

制造商	部件名	数据表	功能描述
STMicroelectronics	STB60NF06L	472Kb / 11P	N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET™ II POWER MOSFET Jul-2003
	STP16NF06	367Kb / 9P	N-CHANNEL 60V - 0.08 ohm - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET Apr-2002
	STP16NF06L	337Kb / 9P	N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET Aug-2002
	STF12PF06	260Kb / 10P	P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET Rev. 2.0
	STP36NF06	310Kb / 9P	N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET Oct-2003
	STB55NF06	543Kb / 18P	N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET 26-Jun-2006
	STP36NF06	336Kb / 14P	N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET 21-Feb-2007
Xian Semipower Electron...	SW830D1	911Kb / 6P	N-channel TO-220/I-PAK/D-PAK/TO-220F MOSFET
STMicroelectronics	STP1806	272Kb / 9P	N-CHANNEL 60V - 0.015 - 50A TO-220 STripFET™ POWER MOSFET Rev.0.1
STMicroelectronics	STB55NF06	797Kb / 19P	N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages 25-May-2012