STB5NB80

N - CHANNEL 800V - 1.8

PowerMESH

™ MOSFET

s

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

DC-AC CONVERTERS FOR WELDING

s

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

March 1999

1

3

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

800

V

Ω)

800

V

G ate-source Voltage

± 30

V

A

A

•)

Drain Current (pulsed)

20

A

W

Derating F act or

0.88

W /

Peak Diode Recovery voltage slope

4

V/ns

Storage T emperature

-65 to 150

Max. Operating Junction T emperature

150

(*) Limited only by maximum temperature allowed

TYPE

ST B5NB80

800 V

< 2.2

Ω

5A

D2PAK

TO-263

1/8