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STB60NF06 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB60NF06
功能描述  N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET™ POWER MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB60NF06 数据表(HTML) 3 Page - STMicroelectronics

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STB60NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 30 V, ID = 30 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
16
ns
tr
Rise Time
108
ns
Qg
Total Gate Charge
VDD = 48V, ID =60A,VGS = 10V
49
66
nC
Qgs
Gate-Source Charge
18
nC
Qgd
Gate-Drain Charge
14
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 30 V, ID = 30 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
43
20
ns
ns
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =48V, ID = 60 A
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
40
12
21
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
60
A
ISDM (1)
Source-drain Current (pulsed)
240
A
VSD (2)
Forward On Voltage
ISD = 60 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60 A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
73
182
5
ns
nC
A
Safe Operating Area
Thermal Impedence



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