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July 2003

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STB60NF06L

STP60NF06L STP60NF06LFP

N-CHANNEL 60V - 0.012

STripFET™ II POWER MOSFET

s

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

s

s

LOW THRESHOLD DRIVE

s

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4”)

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

AUTOMOTIVE

TYPE

STB60NF06L

STP60NF06L

STP60NF06LFP

60 V

60 V

60 V

<0.014

Ω

<0.014

Ω

<0.014

Ω

60 A

60 A

60 A(*)

TO-220

1

2

3

TO-220FP

1

3

TO-263

(Suffix “T4”)

1

2

3

ABSOLUTE MAXIMUM RATINGS

(

due to Rth value

Symbol

Parameter

Value

Unit

STB60NF06L

STP60NF06L

STP60NF06LFP

60

V

60

V

Gate- source Voltage

± 15

V

60

60(*)

A

42

42(*)

A

Drain Current (pulsed)

240

240(*)

A

110

30

W

Derating Factor

0.73

0.2

W/°C

Peak Diode Recovery voltage slope

20

V/ns

Single Pulse Avalanche Energy

320

mJ

Insulation Withstand Voltage (DC)

------

2000

V

Storage Temperature

-55 to 175

°C

Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM