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STB6NA60 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB6NA60
功能描述  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB6NA60 数据表(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
td(on)
tr
Turn-on Time
Rise Time
VDD = 300 V
ID =3 A
RG =47
Ω
VGS =10 V
(see test circuit, figure 3)
35
90
50
125
ns
ns
(di/ dt)on
Turn-on Current Slope
VDD = 480 V
ID =6 A
RG =47
Ω
VGS =10 V
(see test circuit, f igure 5)
200
A/
µs
Qg
Qgs
Qgd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =480 V
ID =3 A
VGS =10 V
54
8
23
75
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
tr(Voff)
tf
tc
Off -volt age Rise Time
Fall Time
Cross-over Time
VDD = 480 V
ID =6 A
RG =47
Ω VGS =10 V
(see test circuit, figure 5)
80
20
115
110
30
155
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
6.5
26
A
A
VSD (
∗)
Forward On Voltage
ISD =6.5 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 6 A
di/dt = 100 A/
µs
VDD =100 V
Tj =150
oC
(see test circuit, figure 5)
600
9
30
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STB6NA60
3/10



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