STB75NE75 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STB75NE75

功能描述	N - CHANNEL 75V - 0.01 ohm - 75A - D2PAK STripFET] POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STB75NE75

N - CHANNEL 75V - 0.01

Ω - 75A - D2PAK

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.01

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

SOLENOID AND RELAY DRIVERS

s

DC MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT

®

INTERNAL SCHEMATIC DIAGRAM

March 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

75

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)75

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC75

A

ID

Drain Current (continuous) at Tc =100

oC53

A

IDM (

•)

Drain Current (pulsed)

300

A

Ptot

T otal Dissipat ion at Tc =25

oC

160

W

Derating Factor

1.06

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

7

V/ns

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 75 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STB75NE75

75 V

<0.013

Ω

75 A

1

3

D

2PAK

TO-263

(suffix ”T4”)

1/8

类似零件编号 - STB75NE75

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