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March 2003

STB80NF12 STW80NF12

STP80NF12 STP80NF12FP

N-CHANNEL 120V-0.013

Ω-80A TO-220/TO-247/TO-220FP/D²PAK

STripFET™ II POWER MOSFET

s

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

s

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

STB80NF12

STP80NF12

STP80NF12FP

STW80NF12

120 V

120 V

120 V

120 V

<0.018

Ω

<0.018

Ω

<0.018

Ω

<0.018

Ω

80 A(*)

80 A(*)

80 A(*)

80 A(*)

1

2

3

1

3

1

2

3

TO-220

TO-263

(Suffix “T4”)

TO-220FP

TO-247

ABSOLUTE MAXIMUM RATINGS

(

(*) Limited by Package

(#) Refer to SOA for the max allovable currente values on FP-type

due to thermal resistance value.

Symbol

Parameter

Value

Unit

STB_P_W80NF12

STP80NF12FP

120

V

120

V

Gate- source Voltage

± 20

V

80

80(#)

A

60

60(#)

A

Drain Current (pulsed)

320

320(#)

A

300

45

W

Derating Factor

2.0

0.3

W/°C

Peak Diode Recovery voltage slope

10

V/ns

Single Pulse Avalanche Energy

700

mJ

Insulation Withstand Voltage (DC)

------

2500

V

Storage Temperature

-55 to 175

°C

Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM