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November 2001

STB85NF3LL

N-CHANNEL 30V - 0.006

LOW GATE CHARGE STripFET™II POWER MOSFET

s

s

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

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ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DESCRIPTION

This application specific Power MOSFET is the third

genaration of STMicroelectronics unique “ Single

Feature Size” strip-based process. The resulting

transistor shows the best trade-off between on-re-

sistance and gate charge. When used as high and

low side in buck regulators, it gives the best perfor-

mance in terms of both conduction and switching

losses. This is extremely important for mother-

boards where fast switching and high efficiency are

of paramount importance.

APPLICATIONS

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SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

TYPE

STB85NF3LL

30 V

< 0.008

Ω

85 A

Symbol

Parameter

Value

Unit

30

V

30

V

Gate- source Voltage

± 16

V

Gate-source Voltage Pulsed

± 20

V

85

A

60

A

Drain Current (pulsed)

340

A

110

W

Derating Factor

0.73

W/°C

Storage Temperature

–65 to 175

°C

Max. Operating Junction Temperature

175

°C

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INTERNAL SCHEMATIC DIAGRAM