STB8NC50 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STB8NC50

功能描述	N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh™ I MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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November 2001

STB8NC50

N-CHANNEL 500V - 0.7

Ω - 8A D2PAK

PowerMesh™II MOSFET

s

TYPICAL RDS(on) = 0.7Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVES

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

(1)ISD ≤8A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

TYPE

VDSS

RDS(on)

ID

STB8NC50

500V

< 0.85

Ω

8 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

8A

ID

Drain Current (continuos) at TC = 100°C

5.4

A

IDM (q)

Drain Current (pulsed)

32

A

PTOT

Total Dissipation at TC = 25°C

135

W

Derating Factor

1

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

1

3

D2PAK

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STB8NC50

制造商	部件名	数据表	功能描述
STMicroelectronics	STB8NC50	352Kb / 10P	N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET Dec-2000
STMicroelectronics	STB8NC50-1	352Kb / 10P	N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET Dec-2000

More results

类似说明 - STB8NC50

制造商	部件名	数据表	功能描述
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