2ST2121 datasheet(3/8 Pages) STMICROELECTRONICS

部件名	2ST2121

功能描述	High power PNP epitaxial planar bipolar transistor

PDF	8 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2ST2121

Electrical characteristics

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Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = -250 V

-5

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = -6 V

-5

µA

V(BR)CEO

(1)

Pulsed duration = 300 µs, duty cycle

≤ 1.5%

Collector-emitter breakdown

voltage (IB = 0)

IC = -50 mA

-250

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = -100 µA

-250

V(BR)EBO

(1) Emitter-base breakdown voltage

(IC = 0)

IE = -1 mA

-6

VCE(sat)

(1) Collector-emitter saturation

voltage

IC = -8 A

IB = -800 mA

-3

VBE

(1)

Base-emitter on voltage

IC = -7 A

VCE = -5 V

-1.5

hFE

DC current gain

IC = -1 A

VCE = -5 V

IC = -7 A

VCE = -5 V

160

Transition frequency

IC = -1 A

VCE = -5 V

MHz

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