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STB90NF3LL 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB90NF3LL
功能描述  N-CHANNEL 30V - 0.0048 ohm - 80A D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB90NF3LL 数据表(HTML) 3 Page - STMicroelectronics

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STB90NF3LL
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 40 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 3)
30
225
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 24 V ID= 80 A VGS= 5 V
39
14
21
51
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V
ID = 40 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
37
24
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
VSD (*)
Forward On Voltage
ISD = 80 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A
di/dt = 100A/µs
VDD = 10 V
Tj = 150°C
(see test circuit, Figure 5)
55
115
3.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)



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