2STN2540 datasheet(3/9 Pages) STMICROELECTRONICS

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2STN2540

Electrical characteristics

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Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -30 V

-0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = -5 V

-0.1

µA

VCE(sat)

(1)

Pulsed duration = 300 µs, duty cycle

≤1.5%

Collector-emitter

saturation voltage

IC = -0.5 A IB = -5 mA

IC = -1 A

IB = -10 mA

IC = -2 A

IB = -200 mA

IC = -5 A

IB = -500 mA

-80

-120

-140

-350

-120

-180

-200

-450

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = -5 A

IB = -500 mA

-1.3

VBE(on)

(1)

Base-emitter on voltage

VCE = -2 V

IC = -2 A

-1.25

hFE

(1)

DC current gain

IC = -0.5 A VCE = -2 V

IC = -1 A

VCE = -2 V

IC = -2 A

VCE = -2 V

IC = -5 A

VCE = -2 V

250

200

150

CCBO

Collector-base

capacitance

IE = 0

VCB = -10 V

f = 1 MHz

ton

Resistive load

Turn-on time

Storage time

Fall time

IC = -1 A _ VCC = -10 V

-IB1 = IB2 = -0.1 A

Tp = 30 µs

426

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