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2STW1693 数据表(PDF) 4 Page - STMicroelectronics

部件名 2STW1693
功能描述  High power PNP epitaxial planar bipolar transistor
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2STW1693 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
2STW1693
4/10
2
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = -80V
-0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = -6V
-0.1
µA
V(BR)EBO
Collector-emitter breakdown
voltage (IC = 0)
IE = -1mA
-6
V
V(BR)CBO
Collector-emitter breakdown
voltage (IE = 0)
IC = -100µA
-80
V
V(BR)CEO
Collector-emitter breakdown
voltage (IB = 0)
IC = -50mA
-80
V
VCE(sat) (1)
1.
Pulsed duration = 300
µs, duty cycle ≤1.5%
Collector-emitter saturation
voltage
IC = -2A
IB = -200mA
IC = -6A
IB = -600mA
-0.6
-1.5
V
V
VBE (1)
Base-emitter voltage
VCE = -5V
IC = -5A
-1.5
V
hFE
DC current gain
IC = -2A
VCE = -4V
50
120
fT
Transition frequency
IC = -0.5A
VCE = -12V
20
MHz
CCBO
Collector-base capacitance
IE = 0 VCB = -10V f = 1MHz
80
pF
ton
tstg
toff
Turn-on time
Storage time
Fall time
IC = -3A
VCC = -30V
IB1 = -IB2 = -0.3A
0.18
0.6
0.09
ns
ns
ns



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